| Pictures |
Technical Information |
Specification + Inquiry |
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| Part No： |
115272 |
| Product No： |
YY-IRP5012C2-850mm |
| Manufacturer： |
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| Description： |
5mm Infrared LED |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | 5mm Infrared LED | | Po (mW) | 90mW | | Vf@lf(mA) | 1.45V | | λP(nm) | 850nm | | △θ(deg) | 15deg | | If max. | 50mA | | Vr max. | 5V | | Package | | | Weight | 60g/200pcs |
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| Part No： |
115273 |
| Product No： |
YY-IRA5012C2-940mm |
| Manufacturer： |
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| Description： |
5mm Infrared LED |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | 5mm Infrared LED | | Po (mW) | 60mW | | Vf@lf(mA) | 1.2V | | λP(nm) | 940nm | | △θ(deg) | 15deg | | If max. | 40mA | | Vr max. | 5V | | Package | | | Weight | |
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| Part No： |
104400 |
| Product No： |
VSLY5940 |
| Manufacturer： |
VISHAY
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| Description： |
High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | High Speed Infrared Emitting Diode, 940 nm, Surface Emitter Technology | | Po (mW) | 190mW | | Vf@lf(mA) | 100mA | | λP(nm) | 940 nm | | △θ(deg) | ± 3Deg | | If max. | 200mA | | Vr max. | | | Package | 4000 pcs/bulk | | Weight | |
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| Part No： |
104399 |
| Product No： |
VSLY5850 |
| Manufacturer： |
VISHAY
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| Description： |
High Speed Infrared Emitting Diode, 850 nmSurface Emitter Technology |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | High Speed Infrared Emitting Diode, 850 nmSurface Emitter Technology | | Po (mW) | 190 mW | | Vf@lf(mA) | 100mA | | λP(nm) | 850 nm | | △θ(deg) | ± 3 Deg | | If max. | 200mA | | Vr max. | | | Package | 4000 pcs/bulk | | Weight | |
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| Part No： |
104398 |
| Product No： |
VSLY3850 |
| Manufacturer： |
VISHAY
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| Description： |
High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | High Speed Infrared Emitting Diode, 850 nm, Surface Emitter Technology | | Po (mW) | 190 mW | | Vf@lf(mA) | 100mA | | λP(nm) | 850nm | | △θ(deg) | ± 18Deg | | If max. | 200mA | | Vr max. | | | Package | 5000 pcs/bulk | | Weight | |
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| Part No： |
96413 |
| Product No： |
TSTS7100 |
| Manufacturer： |
VISHAY
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| Description： |
Infrared Emitting Diode |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | Infrared Emitting Diode | | Po (mW) | 10mW/sr | | Vf@lf(mA) | 1.7V | | λP(nm) | 950nm | | △θ(deg) | +/-5deg | | If max. | 250mA | | Vr max. | 5V | | Package | TO-18-2 | | Weight | |
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| Part No： |
112208 |
| Product No： |
TSHG6410 |
| Manufacturer： |
VISHAY
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| Description： |
High Speed Infrared Emitting Diode, 850nm, GaAIAs Double Hetero |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | High Speed Infrared Emitting Diode, 850nm, GaAIAs Double Hetero | | Po (mW) | 90mW | | Vf@lf(mA) | 1.5V | | λP(nm) | 850nm | | △θ(deg) | 18 deg | | If max. | 200mA | | Vr max. | 5V | | Package | | | Weight | |
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| Part No： |
112235 |
| Product No： |
TSHG6400 |
| Manufacturer： |
VISHAY
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| Description： |
High Speed Infrared Emitting Diode,850nm, GaAIAs Double Hetero |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | High Speed Infrared Emitting Diode,850nm, GaAIAs Double Hetero | | Po (mW) | 70mW | | Vf@lf(mA) | 1.5V | | λP(nm) | 850nm | | △θ(deg) | 38 deg | | If max. | 100mA | | Vr max. | 5V | | Package | | | Weight | |
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| Part No： |
112210 |
| Product No： |
TSHG5510 |
| Manufacturer： |
VISHAY
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| Description： |
High Speed Infrared Emitting Diode, 830nm, GaAIAs Double Hetero |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | High Speed Infrared Emitting Diode, 830nm, GaAIAs Double Hetero | | Po (mW) | 32mW | | Vf@lf(mA) | 1.45V | | λP(nm) | 830nm | | △θ(deg) | 38 deg | | If max. | 100mA | | Vr max. | 5V | | Package | | | Weight | |
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| Part No： |
81654 |
| Product No： |
TSHF5410 |
| Manufacturer： |
VISHAY
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| Description： |
High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero |
| Category： |
23﹒Infrared Emitting Diode |
| Datasheets： |
PDF Category--
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Manufacturer Spec --
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| Description | High Speed Infrared Emitting Diode, 890 nm, GaAlAs Double Hetero | | Po (mW) | 160mW | | Vf@lf(mA) | 5V/100mA | | λP(nm) | 890nm | | △θ(deg) | ± 22 | | If max. | 100mA | | Vr max. | 5V | | Package | T-1 |
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