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Part No: |
76653 |
Product No: |
2SK3564 |
Manufacturer: |
TOSHIBA
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Description: |
Field Effect Transistor(SILICON N Channel MOS Type) |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | Field Effect Transistor(SILICON N Channel MOS Type) | Pins/Package | TO-220SIS | Pd(max.) | 40W | Id(max.) | 15A | Vds(max.) | 900V | Vgs | ±30V | N/P Ch. | N | Rds(on)(max.) Ω | 3.4~4.3W |
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Part No: |
76583 |
Product No: |
2SK3563 |
Manufacturer: |
TOSHIBA
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Description: |
Field Effect Transistor(SILICON N Channel MOS Type) |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | Field Effect Transistor(SILICON N Channel MOS Type) | Pins/Package | TO-220SIS | Pd(max.) | 35W | Id(max.) | 20A | Vds(max.) | 500V | Vgs | ±30V | N/P Ch. | N | Rds(on)(max.) Ω | 1.35~1.50W |
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Part No: |
76590 |
Product No: |
2SK3562 |
Manufacturer: |
TOSHIBA
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Description: |
Field Effect Transistor(SILICON N Channel MOS Type) |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | Field Effect Transistor(SILICON N Channel MOS Type) | Pins/Package | TO-220SIS | Pd(max.) | 40W | Id(max.) | 24A | Vds(max.) | 600V | Vgs | ±30V | N/P Ch. | N | Rds(on)(max.) Ω | 0.9~1.25W |
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Part No: |
76582 |
Product No: |
2SK3561 |
Manufacturer: |
TOSHIBA
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Description: |
Field Effect Transistor(SILICON N Channel MOS Type) |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | Field Effect Transistor(SILICON N Channel MOS Type) | Pins/Package | TO-220SIS | Pd(max.) | 40W | Id(max.) | 32A | Vds(max.) | 500V | Vgs | ±30V | N/P Ch. | N | Rds(on)(max.) Ω | 0.75~0.85W |
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Part No: |
92810 |
Product No: |
2SK3407 |
Manufacturer: |
TOSHIBA
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Description: |
Field Effect Transistor(SILICON N Channel MOS Type) |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | Field Effect Transistor(SILICON N Channel MOS Type) | Pins/Package | TO-220NIS | Pd(max.) | 40W | Id(max.) | 40A | Vds(max.) | 450V | Vgs | ±30V | N/P Ch. | N-ch | Rds(on)(max.) Ω | 0.65Ω | Weight | 1.7g |
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Part No: |
4865 |
Product No: |
2SK30ATM-Y |
Manufacturer: |
TOSHIBA
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Description: |
Field Effect Transistor(SILICON N Channel JUNCTION Type) |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | Field Effect Transistor(SILICON N Channel JUNCTION Type) | Pins/Package | 3P/TO-92 | Pd(max.) | 100mW | Id(max.) | 1.2~3.0mA | Vds(max.) | -50V | Vgs | -5V | N/P Ch. | N | Rds(on)(max.) Ω | | Weight | |
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Part No: |
35876 |
Product No: |
2SK30ATM-GR |
Manufacturer: |
TOSHIBA
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Description: |
N-Channel Junction Type Silicon Transistor |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | N-Channel Junction Type Silicon Transistor | Pins/Package | 3P/TO-92 | Pd(max.) | 100mW | Id(max.) | GR=Idss=2.6~6.5mA | Vds(max.) | -50V | Vgs | -30V | N/P Ch. | N-Channel | Rds(on)(max.) Ω | 100kΩ | Weight | 0.25g |
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Part No: |
79952 |
Product No: |
2SK2998 |
Manufacturer: |
TOSHIBA
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Description: |
TOSHIBA_N CH. MOSFET |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | TOSHIBA_N CH. MOSFET | Pins/Package | 3P/TO-92MOD | Pd(max.) | 0.9W | Id(max.) | 0.5A | Vds(max.) | 500V | Vgs | ±30V | N/P Ch. | N | Rds(on)(max.) Ω | 11.5Ω | Weight | 0.36g |
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Part No: |
66554 |
Product No: |
2SK2996 |
Manufacturer: |
TOSHIBA
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Description: |
Field Effect Transistor |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | Field Effect Transistor | Pins/Package | 3P/TO-220(SC-67) | Pd(max.) | 45W | Id(max.) | 10A | Vds(max.) | 600V | Vgs | ±30V | N/P Ch. | N-Channel | Rds(on)(max.) Ω | 1.0Ω@Vgs=10V,Id=5A | Weight | 0.9g |
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Part No: |
76671 |
Product No: |
2SK2968 |
Manufacturer: |
TOSHIBA
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Description: |
Field Effect Transistor(SILICON N Channel MOS Type) |
Category: |
32﹒TOSHIBA_Power MOSFET |
Datasheets: |
PDF Category--
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Manufacturer Spec --
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Description | Field Effect Transistor(SILICON N Channel MOS Type) | Pins/Package | 2-16C1B | Pd(max.) | 150W | Id(max.) | 30A | Vds(max.) | 900V | Vgs | ±30V | N/P Ch. | N | Rds(on)(max.) Ω | 1.05~1.25W |
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