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Location Home  > Category > 32﹒2SC~Series Transistors
2SC~Series Transistors   [ 194 items ]    |<<    <<    >>    >>|    pages:9 / 20        Go to: page
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2SC3381BL  
Part No: 42024
Product No: 2SC3381BL
Manufacturer: TOSHIBA
Description: Transistor Silicon NPN Epitaxial Type
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionTransistor Silicon NPN Epitaxial Type
Pins/PackageSIP-7PIN
PolNPN
Ic(max)100mA
Pt(Pd)0.4W
Vceo(max)80V
hfe(min.-max.)350-700
MarkingC3381BL
Weight0.4g
Q'TY:
2SC3356-T1B  
Part No: 45373
Product No: 2SC3356-T1B
Manufacturer: NEC
Description: SILICON EPITAXIAL TRANSISTOR(For amplify low noise and high frequency)
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionSILICON EPITAXIAL TRANSISTOR(For amplify low noise and high frequency)
Pins/Package3P/SOT-23
PolNPN
Ic(max)100mA
Pt(Pd)200mW
Vceo(max)12V
hfe(min.-max.)80-160
MarkingR24
Q'TY:
2SC3356-T1B  
Part No: 16167
Product No: 2SC3356-T1B
Manufacturer:
Description: SILICON EPITAXIAL TRANSISTOR(For amplify low noise and high frequency)
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionSILICON EPITAXIAL TRANSISTOR(For amplify low noise and high frequency)
Pins/Package3P/SOT-23
PolNPN
Ic(max)100mA
Pt(Pd)200mW
Vceo(max)12V
hfe(min.-max.)80-160
MarkingR24
Q'TY:
2SC3356-R24  
Part No: 16166
Product No: 2SC3356-R24
Manufacturer:
Description: SILICON EPITAXIAL TRANSISTOR(For amplify low noise and high frequency)
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionSILICON EPITAXIAL TRANSISTOR(For amplify low noise and high frequency)
Pins/Package3P/SOT-23
PolNPN
Ic(max)100mA
Pt(Pd)200mW
Vceo(max)12V
hfe(min.-max.)80-160
MarkingR24
Q'TY:
2SC3355  
Part No: 18447
Product No: 2SC3355
Manufacturer: NEC
Description: NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionNPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
Pins/Package3P/TO-92
PolNPN
Ic(max)100mA
Pt(Pd)600mW
Vceo(max)12V
hfe(min.-max.)50-300
Marking
Weight
Q'TY:
2SC3346  
Part No: 67529
Product No: 2SC3346
Manufacturer: TOSHIBA
Description: TOSHIBA SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionTOSHIBA SILICON NPN EPITAXIAL TYPE(PCT PROCESS)
Pins/Package3Pins/TO-220AB
PolNPN
Ic(max)12A
Pt(Pd)40A
Vceo(max)80V
hfe(min.-max.)40
MarkingC3346
Weight1.9g
Q'TY:
2SC3334  
Part No: 89061
Product No: 2SC3334
Manufacturer: TOSHIBA
Description: Toshiba_Taransistor Silicn NPN Triple Diffused Type
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionToshiba_Taransistor Silicn NPN Triple Diffused Type
Pins/Package3P/TO-92
PolNPN
Ic(max)50mA
Pt(Pd)0.9W
Vceo(max)250V
hfe(min.-max.)50-
MarkingC3334
Weight0.36g
Q'TY:
2SC3328Y  
Part No: 17452
Product No: 2SC3328Y
Manufacturer: TOSHIBA
Description: Transistor Silicon NPN Epitaxial Type
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionTransistor Silicon NPN Epitaxial Type
Pins/Package3P/TO-92
PolNPN
Ic(max)2A
Pt(Pd)900mW
Vceo(max)80V
hfe(min.-max.)120-240
Marking0.4g
Weight
Q'TY:
2SC3324GR  
Part No: 62018
Product No: 2SC3324GR
Manufacturer: TOSHIBA
Description: Transistor Silicon NPN Epitaxial Type (PCT process)
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionTransistor Silicon NPN Epitaxial Type (PCT process)
Pins/Package3P/TO-236MOD(SC-59)
PolNPN
Ic(max)100mA
Pt(Pd)150mW
Vceo(max)120V
hfe(min.-max.)200-400
MarkingCBG
Weight0.018g
Q'TY:
2SC3324BL  
Part No: 62020
Product No: 2SC3324BL
Manufacturer: TOSHIBA
Description: Transistor Silicon NPN Epitaxial Type (PCT process)
Category: 32﹒2SC~Series Transistors
Datasheets: PDF Category-- Manufacturer Spec --
DescriptionTransistor Silicon NPN Epitaxial Type (PCT process)
Pins/Package3P/TO-236MOD(SC-59)
PolNPN
Ic(max)100mA
Pt(Pd)150mW
Vceo(max)120V
hfe(min.-max.)350-700
MarkingCBL
Weight0.02g
Q'TY:
2SC~Series Transistors   [ 194 items ]    |<<    <<    >>    >>|    pages:9 / 20        Go to: page
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